Handler bonding and debonding for semiconductor dies

ABSTRACT

Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

BACKGROUND OF THE INVENTION

The present disclosure generally relates to the field of handlerdebonding, and more particularly relates to advanced methods for handlerdebonding.

Temporary wafer bonding/debonding is an important technology forprocessing semiconductor devices in general. Bonding is the act ofattaching a semiconductor device wafer or singulated, which is to becomea layer in a 3D stack, to a substrate or handling wafer so that it canbe processed, for example, with wiring, pads, and joining metallurgy.Debonding is the act of removing the processed semiconductor devicewafer or singulated from the substrate or handling wafer.

SUMMARY OF THE INVENTION

In one embodiment, a method for processing semiconductor devices isdisclosed. The method comprises applying a release layer. The releaselayer comprises at least one additive that adjusts a frequency ofelectro-magnetic radiation absorption property of the release layer. Theat least one singulated semiconductor device is bonded to the handler.The at least one singulated semiconductor device is packaged while it isbonded to the handler. The release layer is ablated by irradiating therelease layer through the handler with a laser. The at least onesingulated semiconductor device is removed from the transparent handlerafter the release layer has been ablated.

In another embodiment, a method for processing semiconductor devices isdisclosed. The method comprises applying a release layer. The releaselayer comprises at least one additive that adjusts a frequency ofelectro-magnetic radiation absorption property of the release layer.Semiconductor packaging components are then built on the release layer.The release layer is ablated by irradiating the release layer throughthe handler with a laser.

In a further embodiment, a bonded semiconductor package is disclosed.The bonded semiconductor package comprises a handler and at least onepackaged semiconductor device bonded to the transparent handler. Thebonded semiconductor package further comprises a release layer,vulnerable to ablation by laser radiation, provided directly on thetransparent handler, between the transparent handler and the at leastone packaged semiconductor device. The release layer comprises at leastone additive that adjusts a frequency of electro-magnetic radiationabsorption property of the release layer.

In yet another embodiment, a system for processing semiconductor devicesis disclosed. The system comprises memory and at least one processoroperatively coupled to the memory. At least one control unit isoperatively coupled to the memory and the at least one processor. Thecontrol unit operates at least one semiconductor device processingcomponent of the system to apply a release layer to a handler. Therelease layer comprises at least one additive that adjusts a frequencyof electro-magnetic radiation absorption property of the release layer.The at least one singulated semiconductor device is bonded to thehandler. The at least one singulated semiconductor device is packagedwhile it is bonded to the handler. The release layer is ablated byirradiating the release layer through the handler with a laser. The atleast one singulated semiconductor device is removed from thetransparent handler after the release layer has been ablated.

In another embodiment, a computer program product for controllingprocessing of semiconductor devices is disclosed. The computer programproduct comprises a storage medium readable by at least one processingcircuit and storing instructions for execution by the at least oneprocessing circuit for performing a method. The method comprisesapplying a release layer comprising at least one additive that adjusts afrequency of electro-magnetic radiation absorption property of therelease layer. The at least one singulated semiconductor device isbonded to the handler. The at least one singulated semiconductor deviceis packaged while it is bonded to the handler. The release layer isablated by irradiating the release layer through the handler with alaser. The at least one singulated semiconductor device is removed fromthe transparent handler after the release layer has been ablated.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying figures where like reference numerals refer toidentical or functionally similar elements throughout the separateviews, and which together with the detailed description below areincorporated in and form part of the specification, serve to furtherillustrate various embodiments and to explain various principles andadvantages all in accordance with the present invention, in which:

FIG. 1 is an operational flow diagram illustrating one example ofbonding and debonding singulated semiconductor devices according oneembodiment of the present disclosure;

FIG. 2 is a schematic diagram illustrating bonding and debonding of asingulated semiconductor device to a handler utilizing a die-firstprocess according one embodiment of the present disclosure;

FIG. 3 is a schematic diagram illustrating bonding and debonding of asingulated semiconductor device to a handler utilizing a die-lastprocess according one embodiment of the present disclosure;

FIGS. 4A and 4B are schematic diagrams illustrating patterns of applyingelectro-magnetic radiation such as a laser light to a top surface of thehandler according one embodiment of the present disclosure;

FIG. 5 is a schematic diagram illustrating a scanning laser debondingsystem according one embodiment of the present disclosure; and

FIG. 6 is a block diagram illustrating one example of an informationprocessing system according to one embodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the present disclosure will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present disclosure.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

One or more embodiments provide various approaches for the temporarybonding and debonding of semiconductor device packages to a handlingwafer or other substrate that utilize a distinct release layer and anoptional adhesive layer. The release layer can be transparent.Debonding, in one embodiment, is performed by ablating the release layerusing a laser. The laser used can be an ultraviolet (UV) laser (e.g.,355 nm laser), an alternate wavelength laser such as but not limited to266 nm, 308 nm, 532 nm wavelength laser, or an infrared (IR) laser(e.g., wavelength of 1 um to 5 um alternate high wavelength laser).

The release layer can be a UV or an IR ablation layer and it may beapplied to the handling wafer, which may be a glass handler. Theablation layer is then cured. The bonding adhesive that forms theoptional adhesive layer is then applied to either the handler or thesemiconductor die. The ablation layer includes a material that is highlyabsorbing at the wavelength of the laser used in debonding. Both theablation layer as well as the optional bonding adhesive are chemicallyand thermally stable so that they can fully withstand semiconductorpackaging processes.

One example of a glass preparation process can begin with the ablationmaterial being applied e.g. by spin coating onto the handler. Thehandler with the ablation material (which may also act as an adhesivelayer) spin-coated thereon is then soft-baked to remove any solvent.Spin coating parameters depend on the viscosity of the ablation layer,but can fall in the range from approximately 500 rpm to approximately3000 rpm. The soft-bake can fall in the range from approximately 80° C.to approximately 120° C. The temperature of the final cure can fall inthe range from 200° C. to 400° C. For strongly UV-absorbing orUV-sensitive materials, very thin final layers on the order ofapproximately 1000 Å to approximately 2000 Å thick may be sufficient toact as release layers. The ablation layer can be fully and cleanlyablated using common UV (or IR) laser sources such as an excimer laseroperating at 308 nm (e.g. XeCl) or 351 nm (e.g. XeF) or a diode-pumpedtripled YAG laser operating at 355 nm.

The optional bonding layer adhesive can be any temporary or permanentadhesive desired. The bonding adhesive can be applied to either thehandler (e.g., after the ablation layer is added) or to the die to bepackaged. Because the ablation layer controls the handler release, theadhesive can be chosen irrespective of its UV or IR absorptioncharacteristics. The adhesive chosen can be spin applied atapproximately 500 to approximately 3000 rpm, soft-baked at betweenapproximately 80° C. and approximately 120° C. and then cured at betweenapproximately 300° C. and approximately 350° C. for up to an hour innitrogen.

Laser debonding to release the handler at the ablation later interfacecan be performed using any one of a number of UV or IR laser sourcesincluding excimer lasers operating at 308 nm (e.g. XeCl) or 351 nm (e.g.XeF) as well as diode-pumped (tripled) YAG laser operating at 355 nm ordiode-pumped (quadrupled) YAG laser operating at 266 nm. Laser sourcesoperating at other wavelengths are applicable as well. Excimer lasersmay be more expensive, may require more maintenance/support systems(e.g. toxic gas containment) and may have generally have very largeoutput powers at low repetition rates (e.g. hundreds of Watts output atseveral hundred Hz repetition). UV ablation thresholds in the materialsspecified here may require 100-150 milliJoules per square cm (mJ/sqcm)to effect release. Due to their large output powers, excimer lasers cansupply this energy in a relatively large area beam having dimensions onthe order of tens of mm² area (e.g. 0.5 mm×50 mm line beam shape). Dueto their large output power and relatively low repetition rate, a laserdebonding tool which employs an excimer laser can comprise of a movablex-y stage with a fixed beam. Stage movement may be on the order of 10 to50 mm per second. The wafer pair to be debonded may be placed on thestage, and scanned back and forth until the entire surface had beenirradiated.

An alternative laser debonding system can be created using a lessexpensive, more robust and lower power solid-state pumped tripled YAGlaser at 355 nm by rapidly scanning a small spot beam across the wafersurface. The 355 nm wavelength laser may compare favorably to thequadrupled YAG laser at 266 nm for two reasons: 1) Output powers at 355nm are typically 2 to 3 times larger than at 266 nm for the same sizeddiode laser pump power, and 2) many common handler wafer glasses (e.g.Schott Borofloat 33) are approximately 90% or more transmissive at 355nm but only about 15% transmissive at 266 nm. Since 80% of the power isabsorbed in the glass at 266 nm, starting laser powers may beapproximately 6×. higher to achieve the same ablation fluence at therelease interface, and there is risk of thermal shock in the handleritself.

An exemplary 355 nm scanning laser debonding system can include thefollowing: 1) a Q-switched tripled YAG laser with an output power of 5to 10 Watts at 355 nm, with a repetition rate between 50 and 100 kHz,and pulse width of between 10 and 20 ns. The output beam of this lasercan be expanded and directed into a commercial 2-axis scanner,comprising mirrors mounted to x and y galvanometer scan motors. Thescanner may be mounted a fixed distance above a fixed wafer stage, wherethe distance would range from 20 cm to 100 cm depending on the workingarea of the wafer to be released. A distance of 50 to 100 cm mayeffectively achieve a moving spot speed on the order of 10meters/second. An F-theta lens may be mounted at the downward facingoutput of the scanner, and the beam may be focused to spot size on theorder of 100 to 500 microns. For a 6-watt output power laser at 355 nm,at 50 kHz repetition and 12 ns pulse width, a scanner to wafer distanceof 80 cm operating at a raster speed of 10 m/s, the optimal spot sizemay be on the order of 200 microns, and the required ˜100 mJ/sq. cmablation fluence may be delivered to the entire package surface twice inapproximately 30 seconds (for example, using overlapping rows). The useof overlapping rows where the overlap step distance equals half the spotdiameter (e.g., 100 microns) ensures that no part of the wafer is misseddue to gaps between scanned rows, and that all parts of the interfacesee the same total fluence.

FIG. 1 is a flow chart illustrating one embodiment for performinghandler bonding and debonding. A release layer is applied to a handler,at step 102. The release layer comprises at least one additive thatadjusts a frequency of light absorption property of the release layer.The additive can comprise, for example, a 355 nm chemical absorberand/or chemical absorber for one of more wavelengths in a rangecomprising 600 nm to 740 nm. In another embodiment, an optional adhesivelayer is also applied, at step 104. The optional adhesive layer can be,for example, an ultraviolet (UV) curable adhesive. The release layer maybe applied to the handler while the adhesive layer may be applied to adielectric layer onto which singulated semiconductor devices (alsoreferred to herein as a “dies” are to be disposed. However, according toother embodiments, the release layer may be applied to the handler andthen the adhesive layer may be applied to the release layer. In yetanother embodiment, the adhesive can be applied directly to a surface ofthe singulated semiconductor devices. The handler, in one embodiment, isa handle wafer, handle panel, handle roll such as that utilized inroll-to-roll level processing, and/or the like. Example dimensions ofwafer level “handle wafers” may be approximately 200 mm diameter or 300mm diameter and be approximately from 500 um to 800 um thickness.Example panel size form factors may mimic the flat panel sizes for panelfabrication which can be from less than about 350 mm×450 mm square tosizes that exceed 1200 mm square. Example roll to roll sizes may be of25 um to over 100 um thickness for glass with a width of from less than50 mm to over 1200 mm wide and in lengths up to over 300 m.Alternatively, other materials compatible with processing may also beused such as composite of glass and polymer, ceramic (Sapphire, SiC) orpolymer material may be used to support fabrication of some integratedpackages, sub components or structures.

Thereafter, wafer-level packaging is performed to package singulatedsemiconductor devices, at step 106. Singulated semiconductor devices aresemiconductor devices that have been previously fabricated (e.g.,front-end-of-line processing, gate oxide and implants,back-end-of-the-line processing, metal layers, interconnects, etc.) on adevice wafer and cut into individual dies as a result of asemiconductor-die cutting process. The device wafer, in one embodiment,is thinned prior to die cutting resulting in dies ranging from fullthickness wafers of about 780 um to 730 um for 300 mm and 200 mm wafers,respectively down to sub 1 um thick silicon with Front and Back end ofLine (FEOL and BEOL) wiring and dielectrics that can permit thickness ofapproximately 10 um to 150 um thickness in applications. One example ofthickness ranges for die applications can be in the 30 um to 60 umthickness. Note this technology also lends itself to package integrationand die integration as well as package and multi-die (adjacent and/orstacked) type applications.

The singulated semiconductor devices can be packaged using a die-firstor a die-last process. In a die-first process, the dies are firstcoupled to the handier face-down. A mold compound is deposited tocombine the dies to water format in an overmold or compression moldapplication technique or alternate technique. It should be noted thatthe dies can be disposed directly on the release layer (or adhesive) oron an insulating layer, such as a dielectric layer formed on the releaselayer (or adhesive layer). Interconnections, redistribution layer (RDL)and bump processes are then performed a die-last process, packagebackside metallizations with or without bumps are created, dielectric oran insulating layer is deposited along with one or more electricalinterconnection vias per layer and one or more wiring layers/via layersalong with corresponding dielectric insulating layer or layers alongwith a top dielectric layer and electrical interconnections, are formedon the release layer (or adhesive layer). These redistribution layers(RDL) layers may be fan-out, fan-in, or both dependent on application.The above processes are performed to build-up one or more wiring levels.In one embodiment, a molding process can be performed once the wiringlevels have been built-up and die(s) has been attached. In this process,the dies bonded to the wiring structure and then an underfill and/orover molding process may be performed. It should be noted thatembodiments of the present disclosure are applicable to any alternativestructure and packaging build technique for wafer level ormulti-component packaging of multiple singulated semiconductor deviceson the handler wafer, panel or roll to roll process.

Once the semiconductor devices have been packaged, a singulation processis performed to singulate the packages, at step 108. A laser ablationprocess is performed to sever the packages from the handler, at step110. Laser ablation, in one embodiment, is performed by exposing therelease layer to UV laser light through the transparent handler. Uponexposure to the UV laser light, the release layer be ablated, may burn,break down, or otherwise decompose. Thus, the release layer accordingone or more embodiments comprises a material that is broken down underthe exposure of the UV or IR laser light. As any applied adhesive layer(if utilized) remains hard during this process, the packages, along withthe adhesive layer, can be easily removed from the handler. Wheredesired, the remainder of the adhesive layer can be removed from thepackages using various processing techniques such as chemical cleaning,plasma ashing and/or alternate techniques. After the laser ablation hasresulted in the severing of the packages from the handler, the packagescan be easily removed from the handler, for example, by simply pullingthe handler away, vacuum pick up fixture or tool, and the packages canbe cleaned to remove the adhesive, at step 112. The adhesive canchemically removed, plasma ashed for removal and/or mechanically removedsubsequent to laser ablation of the release layer. The adhesive can alsobe removed by chemical cleaning and/or plasma/ashing processes as well.

FIGS. 2 and 3 are schematic diagrams illustrating bonding and debondingof a package to a handler in accordance with one or more embodiments.FIG. 2 shows that dies 202 have been bonded to a handle 204 utilizing adie-first process, whereas FIG. 3 shows that dies 302 have been bondedto a handle 304 utilizing a die-last process. In FIG. 2, a die 202 isbonded to the handler 302 to provide structural support thereto duringpackaging processes. The die 202 comprises a semiconductor substratecomprising silicon or other semiconductor materials and can be coveredby an insulating layer. The die 202 can comprise conductive layers orsemiconductor elements, such as transistors, capacitors, diodes,inductors, resistors, etc. FIG. 2 further shows that various packagingcomponents are built-up from the die 202. For example, one or morewiring levels 206, solder bumps 208, molding compounds (not shown),through-vias (not shown), and/or the like are built up from the die 202.An insulating layer (not shown) can also be disposed between the handle204 and the die 202.

In FIG. 3, various packaging components are built-up from the handler304 to provide structural support thereto. For example, one or moreinsulating layers 305, wiring levels 306, molding compounds (not shown),through-vias (not shown), and/or the like are built up from the handler304. The die 302 is then bonded to the various wiring levels 306.Similar to the die 202 of FIG. 2, the die 302 in FIG. 3 comprises asemiconductor substrate comprising silicon or other semiconductormaterials and can be covered by an insulating layer. The die 302 cancomprise conductive layers or semiconductor elements, such astransistors, capacitors, diodes, inductors, resistors, etc. It should benoted that the packaging components shown in FIGS. 2 and 3 are known tothose of ordinary skill in the art and any die-first and die-lastpackaging processes (and components) are applicable to embodiments ofthe present disclosure.

The handler 204, 304, in one embodiment, a transparent substrate and maycomprise, for example, Borofloat glass. The handler may be sufficientlythick to provide structural integrity to the packaging components bondedthereto. For example, the handler 302, 304 can be approximately 650 μmthick. As described above, a release layer 210, 310 and optionaladhesive layer 212, 312 can be provided between the singulated dies 202and handler 204, as shown in FIG. 2, or between an insulating layer 305and the handler 304, as shown in FIG. 3.

According to one embodiment, the release layer 210, 310 is disposeddirectly upon the handler 204, 304. The release layer 210, 310 can begenerated, for example, by spin coating or spraying the release layermaterial, for example, onto the handler 204, 304, and then curing thematerial using heat and/or UV light. Curing of the release layermaterial may either be performed prior to bonding of the handler 204,304 to the die 202, 302 or packaging components, such as the insulatinglayer 305, or at the same time. It should be noted that, in someembodiments, curing of the release layer is not required.

The release layer 210, 310, in one embodiment, comprises a material thatis highly specialized to absorb strongly near the UV wavelength of laserlight used during laser ablation. For example, in one embodiment, a UVlaser at or near the wavelength 355 nm can be employed. In thisembodiment, the release layer 210, 310 comprises a solid state materialthat is highly absorbent of UV light, and in particular, light having a355 nm wavelength. This material is strong enough to withstand commonlyused packaging techniques while components are bonded to the handler204, 304 without the release layer 210, 310 prematurely breaking down.In other embodiments, the release layer 210, 310 has infrared (IR)wavelength absorption such that the release layer 210, 310 is ablatedwhen passing IR energy through the handler 204, 304 (e.g., siliconhandler) such as at 1064 nm, or at wavelength of compatible withtransmission through the handler such as but not limited to 1,800 to5000 nm or higher.

The release layer 210, 310 may itself comprise an adhesive or be anentirely distinct layer from the optional adhesive layer 212, 312. Therelease layer 210, 310 can comprise a single layer of materials and/orone or more added layers of the same or alternate composition to providefor fill of non planar structures, for accommodation around featuressuch as solder bumps, copper pillars, thinned die, electronic or opticalcomponents or other structures desired in the product or to aideprocessing. In some embodiments, absorption material(s) are added to therelease layer 210, 310 and are matched to the desired debonding laserwavelength, where the use temperature and release parametrics do notdegrade the dye absorption properties so as to make the release layernot release from the handier. Examples of absorption materials are dyesthat can be added to the release layer 210, 310. The addition of adye(s) to the release layer adjusts the release layer material to havehigh absorption for one or more functions such as absorption of layerwavelength for ablation (such as 308 nm, 355 nm, 532 nm, 266 nm, 1064nm, 16000 nm to 2000 n, 2100 nm to 2700 nm or alternate wavelength forlaser ablation of the release layer) and for machine detection for notchfinding in glass such as 670 nm or alternate wavelength compatible withequipment.

Further examples, of dye/additive materials include, but not are limitedto, various bisbenzimidazoles molecules as outlined in the article:‘Spectral studies on Hoechst 33258 and related bisbenzimadazole dyesuseful for fluorescent detection of deoxyriboucleic acid synthesis’, TheJournal of Histochemistry and Cytochemistry, S. A. Latt and G. Stetten.V24, Number 1, pp 23-33, 1976, which is hereby incorporated byreferences in its entirety. Other examples of dye materials includeparticles such as carbon black, titanium dioxide, and various dyes asnoted in ‘Near IR absorbing Dyes’, Juergen Fabian, et. Chem Rev. 1992,92, 1197-1226, which is hereby incorporated by reference in itsentirety.

In one embodiment, the absorption material is a 355 nm chemicalabsorber/dye that is effective from room temperature (approximately 21°C.) to over 250° C. while also being thermally stable at temperaturesabove 250° C. without causing degradation in electro-magnetic absorptionor fading due to exposure of higher temperatures. This absorptionmaterial is usable as a stand alone dye within the release layer or incombination with other chemical absorber/dyes comprising differentchemistries. Stated differently, at least in some embodiments, the 355nm absorption material comprises a chemical composition that iscompatible with other chemical absorber/dyes such as the 670 nm dyesdiscussed below. The absorption material can be utilized within a standalone release layer or a release layer used in conjunction with anadhesive layer(s). In some embodiments, the 355 nm absorption materialdoes not require curing and can be chemically dissolved or removed viaplasma etching. One example, of a 355 nm chemical absorber/dyecomprising is a phenoxy base material such as a bisbenzimidazole ofpyridine comprising the following structure:

This molecule, 2,5-Bis(2-benzimidazolyl)-pyridine comprises a lambda maxabsorption of 355 nm. This molecule does not fade in absorption attemperatures≥250° C., which is important for structures that may need tobe heated to such temperatures during device construction such aspolyimide curing. One method for forming2,5-Bis(2-benzimidazolyl)-pyridine comprises high temperaturecondensation of o-phenylene diamine and 2,5 pyridine dicarboxylic acidin polyphosphoric acid, as shown below:

Another method for forming 2,5-Bis(2-benzimidazolyl)-pyridine involvesthe following with a 80-95% yield:

In some instances, the solubility of the parent compound2,5-Bis(2-benzimidazolyl)-pyridine discussed above may not be adequatein common coat solvents such as cyclohexanone or PMAcetate. Therefore,one or more embodiments further derivatize this molecule as she below:

where R is methylcyclohexane or n-butyl. These two materials have shownto be soluble in cyclohexanone alone or in combination withcyclohexanone and N-Methyl-2-pyrrolidone (NMP) solvent.

In one or more embodiments, electromagnetic (EM) energy may be absorbedin part or completely from the addition of additives to the base releaselayer 210, 310 that is tied to the chemistry of the release material andcan withstand higher temperatures than dye material additives, dye, orother additives and/or from the release base composition. For example,materials that can be covalently linked or bonded to the base polymerrelease layer 210, 310 using of a chemical reaction can be utilized.Examples include molecules such as pyrene carboxylic acid or fluoresceinderivatives that have been chemically attached to Dextran throughesterification reactions between the carboxylic acid of the dye and anydextran hydroxy group. These materials may or may not be thermallystable. Once example of a thermally stable covalently attached dye tothe release layer is the reaction of Anthraquinone-2-carboxylic acid toa phenoxy resin.

In addition, the release layer structure 210, 310 can also include thesame or another EM absorbing additive that supports wafer handling orprocessing such as 670 nm for wafer notch detection or other targeted EMabsorbing materials for other desired processing, equipment or productbenefit. The additive material/dye absorbs one or more wavelengthsbetween 600 nm and 740 nm such as 670 nm. In one embodiments, the notchdetection additive material is effective from room temperature(approximately 21° C.) to over 250° C. while also being thermally stableat temperatures above 250° C. without causing degradation inelectro-magnetic absorption or fading due to exposure of highertemperatures, thermally stable at temperatures≥250° C. In addition, thenotch detection additive material comprises a chemical composition thatis compatible with other chemical absorber/dyes such as the 355 nmchemical absorber/dye discussed above. In some embodiments, the notchdetection additive material and the 355 nm chemical absorber/dye aredisposed within the same release layer. One example of a notch detectionadditive material comprising the above characteristics is a green dyefully soluble in cyclohexanone (CHN).

Other examples of 670 nm additive materials include the dye VIS 661 fromQCR corporation, ‘Zerox Green’ phthalocyanne dye, or the Bay substitutedperylene bis-imide dyes as described in the publication: UltrafastPhotoinduced Charge separation resulting from self Assembly of a greenperylene based into pie-stacked arrays', J Phys Chem A, 2005, 109,970-975, which is hereby incorporated by reference in its entirety.Other examples of 670 nm additives include vanadyl phthlaocyanine,carbon black, copper phthalocyanine, vanadyl, phthalocyanineanthraquinone, anthraquinone functionalized polymer, a combination ofthe above, and/or the like. In some embodiments, the EM absorber addedto the release layer structure 210, 310 allows for infrared (IR) releasesuch for laser wavelengths of 1 um to 5 um or higher. It should be notedthat the added layers do not require adsorption material for the releasewavelength of the targeted laser debonding.

Regardless of the material used, the release layer 210, 310 comprises amaterial(s) that can be laser ablated at the UV or IR wavelength ofchoice to release the handler 204, 304 from a wafer level package. Inother words, the targeted absorption material is matched to the desireddebonding laser wavelength. The optional adhesive layer 212, 312 can becreated by applying adhesive material to either the die 202 or to therelease layer 204, 304. The adhesive layer 212, 312 comprises a distinctmaterial from that which is used as the release layer 212, 312, and inparticular, the adhesive layer 212, 312 may be an adhesive that does notstrongly absorb the light of the wavelength that is used to ablate therelease layer 210, 310. While any number of suitable adhesives can beused for this layer one example of a suitable adhesive is TOK A0206. Theadhesive layer can be created, for example, by applying the adhesivematerial to the die 202 or to the release layer 210, 310 and cured usingheat.

In one or more embodiments, the release layer 210, 310 is cured prior toperforming bonding. In this way, potential adverse interaction betweenthe release layer 210, 310 material and the optional adhesive layer 212,312, material can be minimized. Bonding can be performed in a bonder,for example, a Suss bonder using approximately 500 mbar of applied forcein a temperature corresponding to the temperature of the adhesive layer212, 312 material. In bonding, die 202 may be bonded to the handler 204via the release layer 210 or optional adhesive layer 212.

After the dies 202, 302 have been packaged and the packages singulated,a laser 214, 314 is used to irradiate the release layer 210, 310. Asdiscussed above, the laser can have a wavelength between 300 nm and 5000nm. However, other wavelengths are applicable as well. For example, thelaser 214, 314 can be a 308 nm excimer laser or a 355 nm DPSS lasercreated by frequency tripling a diode-laser at 1064 nm. According to oneexample, the laser 214, 314 can be a HIPPO 355QW laser with a wavelengthof 355 nm, a power of 5 W at 50 kHz, a repetition rate of 15-300 kHz,and a pulse width of less than 12 ns at 50 kHz. However, other UV lasersmay be used such as a HIPPO 266QW having a 266 nm wavelength. In anotherexample, the laser 214, 314 is an IR laser.

The release layer 210, 310 is irradiated though the handler 204, 304,which may be transparent, at least to the wavelength of the laser 214,314 used. The laser 214, 314 can produce a spot beam that is scannedacross the surface of the handler 204, 304, for example, in a rasterpattern, or the laser 214, 314 can produce a fan beam that is swept onceor multiple times across the handler 204, 304. Directing of the lightradiated from the laser 214, 314 can be handled by the use of a seamierand lens 216, 316, which may be, for example, an F-Theta scan lenshaving an 810 mm f1. FIG. 4 is a schematic diagram illustrating patternof applying the laser light to a top surface 418 of the handler 404 inaccordance with one or more embodiments. As seen in FIG. 4A, the laserlight can be directed across the top surface 418 of the handler 404 as aspot beam drawn to lines 420, which move along an x-axis direction ofthe top surface 418 of the handler 404 with each successive line 420being drawn lower in the y-axis direction. Alternatively, as seen inFIG. 4B, the laser light can be directed in a serpentine pattern 422.

As the UV or IR wavelength of the laser 214, 314 used may compriserelatively high energy, the light may efficiently ablate the releaselayer 210, 310. Once ablated, the singulated packages can be freelyremoved from the handler layer 204, 304. Thereafter, a solvent orcleaning chemical can be used to remove any remaining elements of theoptional adhesive layer 212, 312 and/or release layer 210, 310 that mayremain on the packages.

FIG. 5 is a schematic; diagram illustrating an apparatus for performinglaser debonding in accordance with one or more embodiments. According tosome embodiments, such as is shown here in FIG. 5, the bonded handlerand semiconductor packages 524 can remain stationary, for example, on astage. According to other embodiments, the stage can be movable. Thelaser 514 provides a beam that is sent into a beam expander 526 toprovide the desired beam size. The beam then enters a scanner 528 wherethe beam is directed along the x and y axes. One or more control units530 affect control of the laser 514, beam expander 526 and the scanner528. Where the stage upon which the bonded handler and packages 524 areheld is movable, the controller 530 can control the movement of thestage as well. In such a case the scanner 528 is omitted. A computersystem 532 can be preprogrammed with the manner of control and theseinstructions can be executed though the one or more control units 530. Ascan lens 534 can adjust the beam so as to strike the bonded handler andpackages 524 with the desired spot characteristics.

Referring now to FIG. 6, this figure is a block diagram illustrating aninformation processing system 602 that can be utilized in embodiments ofthe present disclosure. For example, the information processing system602, in one embodiment, controls one or more semiconductor deviceprocessing components for performing one more operations of the variousembodiments of the present disclosure. The information processing system602 is based upon a suitably configured processing system configured toimplement one or more embodiments of the present disclosure. Anysuitably configured processing system can be used as the informationprocessing system 602 in embodiments of the present disclosure. Thecomponents of the information processing system 602 can include, but arenot limited to, one or more processors or processing units 604, a systemmemory 606, and a bus 608 that couples various system componentsincluding the system memory 606 to the processor 604.

The bus 608 represents one or more of any of several types of busstructures, including a memory bus or memory controller, a peripheralbus, an accelerated graphics port, and a processor or local bus usingany of a variety of bus architectures. By way of example, and notlimitation, such architectures include Industry Standard Architecture(ISA) bus, Micro Channel Architecture (MCA) bus, Enhanced ISA (EISA)bus, Video Electronics Standards Association (VESA) local bus, andPeripheral Component Interconnects (PCI) bus.

Although not shown in FIG. 6, the main memory 606 includes one or morecontrol units such as (but not limited to) control unit 530 thatcontrols operating of one or more semiconductor device processingcomponents. Alternatively, the control unit(s) reside within theprocessor 604, or is a separate hardware component. The system memory606 can also include computer system readable media in the form ofvolatile memory, such as random access memory (RAM) 610 and/or cachememory 612. The information processing system 602 can further includeother removable/non-removable, volatile/non-volatile computer systemstorage media. By way of example only, a storage system 614 can beprovided for reading from and writing to a non-removable or removable,non-volatile media such as one or more solid state disks and/or magneticmedia (typically called a “hard drive”). A magnetic disk drive forreading from and writing to a removable, non-volatile magnetic disk(e.g., a “floppy disk”), and an optical disk drive for reading from orwriting to a removable, non-volatile optical disk such as a CD-ROM,DVD-ROM or other optical media can be provided. In such instances, eachcan be connected to the bus 608 by one or more data media interfaces.The memory 606 can include at least one program product having a set ofprogram modules that are configured to carry out the functions of anembodiment of the present disclosure.

Program/utility 616, having a set of program modules 618, may be storedin memory 606 by way of example, and not limitation, as well as anoperating system, one or more application programs, other programmodules, and program data. Each of the operating system, one or moreapplication programs, other program modules, and program data or somecombination thereof, may include an implementation of a networkingenvironment. Program modules 618 generally carry out the functionsand/or methodologies of embodiments of the present disclosure.

The information processing system 602 can also communicate with one ormore external devices 620 such as a keyboard, a pointing device, adisplay 622, etc.; one or more devices that enable a user to interactwith the information processing system 602; and/or any devices (e.g.,network card, modem, etc.) that enable computer system/server 602 tocommunicate with one or more other computing devices. Such communicationcan occur via I/O interfaces 624. Still yet, the information processingsystem 602 can communicate with one or more networks such as a localarea network (LAN), a general wide area network (WAN), and/or a publicnetwork (e.g., the Internet) via network adapter 626. As depicted, thenetwork adapter 626 communicates with the other components ofinformation processing system 602 via the bus 608. Other hardware and/orsoftware components can also be used in conjunction with the informationprocessing system 602. Examples include, but are not limited to:microcode, device drivers, redundant processing units, external diskdrive arrays, RAID systems, tape drives, and data archival storagesystems.

As will be appreciated by one skilled in the art, aspects of the presentdisclosure may be embodied as a system, method, or computer programproduct. Accordingly, aspects of the present disclosure may take theform of an entirely hardware embodiment, an entirely software embodiment(including firmware, resident software, micro-code, etc.) or anembodiment combining software and hardware aspects that may allgenerally be referred to herein as a “circuit”, “module”, or “system.”

Embodiments of the present disclosure may be a system, a method, and/ora computer program product. The computer program product may include acomputer readable storage medium (or media) having computer readableprogram instructions thereon for causing a processor to carry outaspects of the present invention. The computer readable storage mediumcan be a tangible device that can retain and store instructions for useby an instruction execution device. The computer readable storage mediummay be, for example, but is not limited to, an electronic storagedevice, a magnetic storage device, an optical storage device, anelectromagnetic storage device, a semiconductor storage device, or anysuitable combination of the foregoing. A non-exhaustive list of morespecific examples of the computer readable storage medium includes thefollowing: a portable computer diskette, a hard disk, a random accessmemory (RAM), a read-only memory (ROM), an erasable programmableread-only memory (EPROM or Flash memory), a static random access memory(SRAM), a portable compact disc read-only memory (CD-ROM), a digitalversatile disk (DVD), a memory stick, a floppy disk, a mechanicallyencoded device such as punch-cards or raised structures in a groovehaving instructions recorded thereon, and any suitable combination ofthe foregoing. A computer readable storage medium, as used herein, isnot to be construed as being transitory signals per se, such as radiowaves or other freely propagating electromagnetic waves, electromagneticwaves propagating through a waveguide or other transmission media (e.g.,light pulses passing through a fiber-optic cable), or electrical signalstransmitted through a wire.

Computer readable program instructions described herein can bedownloaded to respective computing/processing devices from a computerreadable storage medium or to an external computer or external storagedevice via a network, for example, the Internet, a local area network, awide area network and/or a wireless network. The network may comprisecopper transmission cables, optical transmission fibers, wirelesstransmission, routers, firewalls, switches, gateway computers, and/oredge servers. A network adapter card or network interface in eachcomputing/processing device receives computer readable programinstructions from the network and forwards the computer readable programinstructions for storage in a computer readable storage medium withinthe respective computing/processing device.

Computer readable program instructions for carrying out operations ofthe present invention may be assembler instructions,instruction-set-architecture (ISA) instructions, machine instructions,machine dependent instructions, microcode, firmware instructions,state-setting data, or either source code or object code written in anycombination of one or more programming languages, including an objectoriented programming language such as Smalltalk, C++ or the like, andconventional procedural programming languages, such as the “C”programming language or similar programming languages. The computerreadable program instructions may execute entirely on the user'scomputer, partly on the user's computer, as a stand-alone softwarepackage, partly on the user's computer and partly on a remote computeror entirely on the remote computer or server. In the latter scenario,the remote computer maybe connected to the user's computer through anytype of network, including a local area network (LAN) or a wide areanetwork (WAN), or the connection may be made to an external computer(for example, through the Internet using an Internet Service Provider).In some embodiments, electronic circuitry including, for example,programmable logic circuitry, field-programmable gate arrays (FPGA), orprogrammable logic arrays (PLA) may execute the computer readableprogram instructions by utilizing state information of the computerreadable program instructions to personalize the electronic circuitry,in order to perform aspects of the present invention.

Aspects of the present disclosure are described herein with reference toflowchart illustrations and/or block diagrams of methods, apparatus(systems), and computer program products according to embodiments of theinvention. It will be understood that each block of the flowchartillustrations and/or block diagrams, and combinations of blocks in theflowchart illustrations and/or block diagrams, can be implemented bycomputer readable program instructions.

These computer readable program instructions may be provided to aprocessor of a general purpose computer, special purpose computer, orother programmable data processing apparatus to produce a machine, suchthat the instructions, which execute via the processor of the computeror other programmable data processing apparatus, create means forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks. These computer readable program instructionsmay also be stored in a computer readable storage medium that can directa computer, a programmable data processing apparatus, and/or otherdevices to function in a particular manner, such that the computerreadable storage medium having instructions stored therein comprises anarticle of manufacture including instructions which implement aspects ofthe function/act specified in the flowchart and/or block diagram blockor blocks.

The computer readable program instructions may also be loaded onto acomputer, other programmable data processing apparatus, or other deviceto cause a series of operational steps to be performed on the computer,other programmable apparatus or other device to produce a computerimplemented process, such that the instructions which execute on thecomputer, other programmable apparatus, or other device implement thefunctions/acts specified in the flowchart and/or block diagram block orblocks.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods, and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof instructions, which comprises one or more executable instructions forimplementing the specified logical function(s). In some alternativeimplementations, the functions noted in the block may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The description of the present disclosure has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the invention in the form disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

What is claimed is:
 1. A method for processing semiconductor devices, the method comprising: applying a release layer to a handler, wherein the release layer comprises at least one additive material, the at least one additive material adjusts a frequency of electro-magnetic radiation absorption property of the release layer, wherein the at least one additive material is:

where R is one of methylcyclohexane and n-butyl; bonding at least one singulated semiconductor device to the handler; packaging the at least one singulated semiconductor device while it is bonded to the handler; ablating the release layer by irradiating the release layer through the handler with a laser; and removing the at least one singulated semiconductor device from the handler after the release layer has been ablated.
 2. The method of claim 1, wherein the at least one additive material comprises a single additive material, wherein the single additive material is one of chemical absorber for a 355 nm wavelength and a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the single additive material additive material is effective at room temperature to a temperature greater than 250° C. and is thermally stable at a temperature ≥250° C.
 3. The method of claim 1, wherein the at least one additive material comprises a first additive material and a second additive material, wherein the first additive material is a chemical absorber for a 355 nm wavelength and the second additive material is a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the each of the first and second additive materials is thermally stable at a temperature ≥250° C.
 4. The method of claim 1, wherein the at least one additive material is a 355 nm chemical absorber in a phenoxy base material.
 5. The method of claim 1, wherein the at least one additive is chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm and fully soluble in cyclohexanone.
 6. The method of claim 1, further comprising: forming a dielectric layer on the release layer prior to bonding the at least one singulated semiconductor device, wherein the dielectric layer is situated between the release layer and the at least one singulated semiconductor device.
 7. The method of claim 1, further comprising: applying an adhesive layer, that is distinct from the release layer, between the at least one singulated semiconductor device and the release layer.
 8. The method of claim 1, wherein light radiated from the laser has a wavelength of approximately 250 nm to 5000 nm.
 9. A method for processing semiconductor devices, the method comprising: applying a release layer to a handler, wherein the release layer comprises at least one additive material, the at least one additive material adjusts a frequency of electro-magnetic radiation absorption property of the release layer, wherein the at least one additive material is 2, 5-Bis(2-benzimidazolyl)-pyridine; building semiconductor packaging components on the release layer; bonding at least one singulated semiconductor device to the semiconductor packaging components; ablating the release layer by irradiating the release layer through the handler with a laser; and removing the at least one singulated semiconductor device from the handler after the release layer has been ablated.
 10. The method of claim 9, wherein the at least one additive material comprises a single additive material, wherein the single additive material is one of chemical absorber for a 355 nm wavelength and a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the single additive material is effective at room temperature to a temperature greater than 250° C. and is thermally stable at a temperature ≥250° C.
 11. The method of claim 9, wherein the at least one additive material comprises a first additive material and a second additive material, wherein the first additive material is a chemical absorber for a 355 nm wavelength and the second additive material is a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the each of the first and second additive materials is thermally stable at a temperature ≥250° C.
 12. The method of claim 9, wherein the at least one additive material is a 355 nm chemical absorber in a phenoxy base material.
 13. The method of claim 9, wherein the at least one additive is chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm and fully soluble in cyclohexanone.
 14. A method for processing semiconductor devices, the method comprising: applying a release layer to a handler, wherein the release layer comprises at least one additive material, the at least one additive material adjusts a frequency of electro-magnetic radiation absorption property of the release layer, wherein the at least one additive material is:

where R is one cyclohexane and n-butyl; building semiconductor packaging components on the release layer; bonding at least one singulated semiconductor device to the semiconductor packaging components; ablating the release layer by irradiating the release layer through the handler with a laser; and removing the at least one singulated semiconductor device from the handler after the release layer has been ablated.
 15. The method of claim 14, wherein the at least one additive material comprises a single additive material, wherein the single additive material is one of chemical absorber for a 355 nm wavelength and a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the single additive material additive material is effective at room temperature to a temperature greater than 250° C. and is thermally stable at a temperature ≥250° C.
 16. The method of claim 14, wherein the at least one additive material comprises a first additive material and a second additive material, wherein the first additive material is a chemical absorber for a 355 nm wavelength and the second additive material is a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the each of the first and second additive materials is thermally stable at a temperature ≥250° C.
 17. The method of claim 14, wherein the at least one additive material is a 355 nm chemical absorber in a phenoxy base material.
 18. The method of claim 14, wherein the at least one additive is chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm and fully soluble in cyclohexanone.
 19. The method of claim 14, further comprising: forming a dielectric layer on the release layer prior to bonding the at least one singulated semiconductor device, wherein the dielectric layer is situated between the release layer and the at least one singulated semiconductor device.
 20. The method of claim 14, wherein light radiated from the laser has a wavelength of approximately 250 nm to 5000 nm. 